A model of the temperature-dependent operation of a MOSFET

Nonuniform temperature distributions can greatly affect the operation of semiconductor devices. At present, computer programs using numerical methods can be used to simulate the steady-state or transient response of one- or two-dimensional models of semi conductor devices operating at constant temperature. Recently developed programs allow the steady-state analysis of semiconductor devices under nonisothermal conditions. The transient response, the mode of operation for most high-power semiconductor devices, has not been analyzed for a MOSFET.

This paper presents a one-dimensional mathematical model for predicting the nonisothermal behavior of a MOSFET under pulse excitation. Both the transient electrical and temperature responses are shown. Redistribution of voltages and carriers resulting from the differences in the electrical and tempera ture time constants is discussed.