Results obtained for the first time using Ga2S3 and Ga2Se3 compounds as sources of donor elements for the molecular beam epitaxy of AlxGa1−xSb (0≤x≤1) and AlxGa1−x As (0≤x≤0·4) are reported. In GaAs, free electron concentrations obtained when incorporating the donors from these sources can be readily controlled up to a maximum of 5 × 1018 cm −3. For AxGa1−xSb it was possible to compensate the high concentration of native acceptors and obtain n type conductivity over the full composition range of the alloy. In AxGa1−xSb donor related defects (DX centres) were observed.
MST/3331
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References
1.
McLEANT. D., KERRT. M., WESTWOODD. I.WOODC. E. C., and HOWELLD. F.:J. Vac. Sci. Technol. B, 1986, 4, 601.
2.
CHIUI. H., DITZENBERGERM., LUFTMANH. S., TSANGW. T., and HAN. T.: Appl. Phys. Lett., 1990, 56, 1688.
3.
POOLEI., LEEM. E., SINGERK. E., FROSTJ. E. F., KERRT.M.
4.
WOODC. E. C., ANDREWSD. A., ROTHWELLW. M., and DAVIESG. J.: J. Appl. Phys., 1988, 63, 395.
5.
CLEVERLEYI. R., POOLEI., CANNARDP. J., and SINGERK. E.: Inst. Phys. Conf. Ser., 1990, 112, 93.
6.
DOBACZEWSKIL., KACZORP., LARGERJ. M., PEAKERA. R. and POOLEI.: in Proc. 20th Int. Conf. on ‘Physics of semiconductors’, (ed. AnastassakisE. M. and JoannopoulosJ. D.), 497; 1990, Singapore, World Scientific.
7.
POOLEI., LEEM. E., MISSOUSM., and SINGERK. E.: J. Appl. Phys., 1987, 62, 3988.
