Fabrication and electrochemical characterization of boron-doped diamond interdigitated array disc electrode

Abstract

In the current paper, a novel boron-doped diamond interdigitated array disc electrode with controlled electrode bandwidth and gap geometries was fabricated using hot filament chemical vapour deposition (HFCVD) and photoetching technology. The diamond film was first deposited on the silicon wafer using HFCVD, the diamond film was then patterned by deposited SiO_xN_y and photoetching, and finally the boron-doped diamond film was deposited on the diamond film. There are 942 microelectrode pieces interdigitated with each other on the disc. A single microelectrode is 30 μm in width and 10 mm in length, the shortest distance between the two adjacent electrodes is 30 μm. The interdigitated array disc electrode is characterized via scanning electron microscopy and Raman spectroscopy. The electrochemical characterization of the interdigitated array disc electrode was performed using the Fe(CN)^4-/3-₆ redox couple by cyclic voltammetry. This interdigitated array disc electrode should enable applications in harsh conditions such as at high temperatures and in strong acid and alkali solutions.