Fabrication of a polyaniline/CdSe nanocomposite film light-emitting device by the chemical route

PANI/CdSe multiple-quantum wells (MQWs) and high-brightness MQW light-emitting diodes were grown by the chemical technique. An aniline monomer was electropolymerized to polyaniline (PANI) by using camphor sulphonic acid (CSA). Electrodeposited PANI, chemically synthesized cadmium selenide quantum dots (Q-CdSe), and nanocomposite films (PANI/Q-CdSe) were investigated in optical, structural, and morphological studies. A crystallite size of approximately 1.9nm was calculated from the (111) diffraction peak of Q-CdSe using Scherrer's formula. Multiple peaks in photoluminescence (PL) of PANI/CdSe MQWs and in electroluminescence (EL) of MQW light-emitting devices (LEDs) were observed at room temperature. High-brightness LEDs emitting at 480nm were successfully fabricated with an output power well above 0.2mW at 10mA and with a forward voltage of less than 0.85V.