An In-Depth Study Linking the Infrared Spectroscopy and Photoluminescence of Porous Silicon during Ambient Hydrogen Peroxide Oxidation

Abstract

We carefully tailored a porous silicon (pSi) surface by oxidation with hydrogen peroxide (H₂O₂) to determine the time-dependent changes in nano-crystallite surface chemistries (e.g., Si–O-Si, SiH_x [x = 1,2], O_ySiH [y=2,3], and SiOH/H₂O) and their influence on the pSi photoluminescence (PL). The relationship between infrared band amplitudes and PL intensity were evaluated under H₂O₂ and O₃ (previously studied) oxidation. The pSi surface composition under O₃ and H₂O₂ oxidation conditions tended to, save the O_ySiH (y=2,3) species, approach similar values at the longest oxidation times studied, but they took very different paths in reaching these end points. Furthermore, the pSi surface compositions that exhibit maximum/minimum PL under each oxidant are very different.

Keywords

Porous silicon Hydrogen peroxide Ozone Photoluminescence Infrared Correlation

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