Abstract
Self-consistent calculations of multi-quantum well semiconductor structures based on a Finite-Element Method are presented. The self-consistent calculation is specially needed when wells of different width are present in the structure, generating a larger charge separation and affecting significantly the tunneling conditions. The object-oriented computer code used was implemented using a finite-element class library developed and used in previous works. Results for an asymmetric heterostructure with a larger well and contact layers are also presented.