This tutorial paper discusses the SPICE BSIM3v3.1 model parameter extraction and optimisation strategies that show consistency and very good accuracy in circuit simulation, less than 10% error, for practical IC design application in deep submicron processes. This paper describes an approach to BSIM3v3.1 model parameter extraction that mitigates or eliminates many of the unstable circuit behaviours observed during SPICE simulations with BSIM3v3. We present here a strategy applicable to 0.18 micron CMOS technology, in which the accuracy of the final extracted model parameters is evaluated by comparing simulations of inverter gain and a 31-stage ring oscillator with measured data.
AbebeH. and CumberbatchE., ‘Quantum mechanical effects correction models for inversion charge and current-voltage (I—V) characteristics of the MOSFET device’, in Proc. Int. Nanotechnology Conf., San Francisco, USA, February 23–27, 2003, Vol. 2 (6th Computational Publications, Cambridge, MA, 2003), pp. 218–221.
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LiuW., MOSFET Models for SPICE Simulation including BSIM3v3 and BSIM4 (John Wiley, New York, 2001).
